PART |
Description |
Maker |
HY29F400BT-55 HY29F400BR-90 HY29F400BT-70 HY29F400 |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 4兆位12Kx8/256Kx16伏只闪存 x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
BM29F400T-15TC BM29F400T-90TC BM29F400T-12TC |
x8/x16 Flash EEPROM 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
WINBOND ELECTRONICS CORP
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MB84VD21081-85-PBS MB84VD21081-85-PTS MB84VD21091- |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
SPANSION[SPANSION]
|
HY229F800BT-55 HY29F800BT-55E HY29F800BT-55I HY229 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM EEPROM EEPROM
|
Hynix Semiconductor, Inc. SIEMENS AG AEGIS Semicondutores LTDA
|
MX29F8100MC-12C4 MX29F8100MC-10C4 MX29F8100MC-15C4 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Renesas Electronics, Corp.
|
DPZ128X16IHY-25B DPZ128X16IHY-25C DPZ128X16IHY-25I |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
Glenair, Inc. Air Cost Control Vicor, Corp. TE Connectivity, Ltd. HIROSE ELECTRIC Co., Ltd. L-com, Inc.
|
DPZ2MS16XP-25C DPZ2MS16XP-30C DPZ2MS16P-30C |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
AVX, Corp.
|